FDMC86106LZ Datasheet, Mosfet, Fairchild Semiconductor

FDMC86106LZ Features

• Mosfet
• Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
• Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
• HBM ESD protection level > 3 KV typical (Note 4)
• 1

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Part number:

FDMC86106LZ

Manufacturer:

Fairchild Semiconductor

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350.07kb

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📄 Datasheet

Description:

N-channel power trench mosfet. This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special

TAGS

FDMC86106LZ

Fairchild Semiconductor

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