FDMC86106LZ N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC86106LZ N-Channel Power Trench® MOSFET December 2010 FDMC86106LZ N-Channel Power Trench® MOSFET 100 V, 7.5 A, 103 mΩ .
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minim.

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Datasheet Specifications

Part number: FDMC86106LZ
Manufacturer: Fairchild Semiconductor
File Size: 350.07 KB
Datasheet: FDMC86106LZ_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
* HBM ESD protection level > 3 KV typical (Note 4)
* 100% UIL Tested

FDMC86106LZ Distributors

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FDMC86106LZ N-Channel Power Trench MOSFET Fairchild Semiconductor

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