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FDMC86260ET150 MOSFET

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FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ January 2015 .
Extended TJ rating to 175°C. Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5. Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.

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FDMC86260ET150 MOSFET Fairchild Semiconductor
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