FDMC86260ET150 - MOSFET

Fairchild Semiconductor

FDMC86260ET150 Datasheet Preview — Preview of FDMC86260ET150 PDF

Datasheet Details

Part number	FDMC86260ET150
Manufacturer	Fairchild ↗ Semiconductor
File Size	187.01 KB
Description	MOSFET
Datasheet	FDMC86260ET150-FairchildSemiconductor.pdf

FDMC86260ET150 Product details

Description

Extended TJ rating to 175°C Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A High performance technology for extremely low rDS(on) 100% UIL Tested Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Applicat

Features

General.

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Published: Jan 10, 2017 |