FDMC86265P - MOSFET
* Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A * Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A * Very Low RDS-on Mid Voltage P-channel Silicon Technology Optimised for Low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process t
