FDMC86102LZ N-Channel MOSFET

ON Semiconductor

Description

MOSFET - N-Channel, Shielded Gate, POWERTRENCH) 100 V, 24 mW , 22 A FDMC86102LZ .
This N. Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC86102LZ
Manufacturer: ON Semiconductor ↗
File Size: 259.92 KB
Datasheet: FDMC86102LZ-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A
* Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A
* HBM ESD Protection Level > 6 kV Typical (Note 4)
* 100% UIL Tested

Applications

* DC
* DC Switching MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain
* to
* Source Voltage 100 V VGS Gate
* to
* Source Voltage ±20 V ID Drain Current A
* Continuous TC = 25°C 22
* Con

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FDMC86102LZ N-Channel MOSFET ON Semiconductor

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