FDMC86244 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC86244 N-Channel Power Trench® MOSFET February 2012 FDMC86244 N-Channel Power Trench® MOSFET 150 V, 9.4 A, 134 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Datasheet Specifications

Part number: FDMC86244
Manufacturer: Fairchild Semiconductor
File Size: 354.94 KB
Datasheet: FDMC86244_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A
* Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested

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FDMC86244 N-Channel Power Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC86244-like datasheet