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FDMC86102 N-Channel MOSFET

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Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 100 V, 20 A, 24 mW FDMC86102 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A
* Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A
* Low Profile
* 1 mm max in Power 33
* 100% UIL Tested
* This Device is Pb
* Free, Halide Free and is RoHS Complia

Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous TC = 25°C 100 V ±20 V A 20
* Continuous TA = 25°C (Note 1a) 7

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