FDC642P-F085P

P-Channel MOSFET

ON Semiconductor

* Typ RDS(on) = 52.5 mW at VGS =

* 4.5 V, ID =

* 4 A

* Typ RDS(on) = 75.3 mW at VGS =

* 2.5 V, ID =

* 3.2 A

* Fast Switching Speed

* Low Gate Charge (6.9 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(on)

* SUPERSOTt

FDC642P-F085P

1.20 MB

P-channel mosfet.

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FDC642P-F085P P-Channel MOSFET ON Semiconductor

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