Description
MOSFET * P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P .
Features
* Typ RDS(on) = 52.5 mW at VGS =
* 4.5 V, ID =
* 4 A
* Typ RDS(on) = 75.3 mW at VGS =
* 2.5 V, ID =
* 3.2 A
* Fast Switching Speed
* Low Gate Charge (6.9 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(on)
* SUPERSOTt
Applications
* Load Switch
* Battery Protection
* Power management
MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
* Continuous (VGS = 4.5 V)
* Pulsed
* 20
V