FDC6020C Complementary PowerTrench MOSFET

Fairchild Semiconductor

Description

FDC6020C November 2003 FDC6020C Complementary PowerTrench MOSFET General .
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on.

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Datasheet Specifications

Part number: FDC6020C
Manufacturer: Fairchild Semiconductor
File Size: 211.51 KB
Datasheet: FDC6020C_FairchildSemiconductor.pdf
Description: Complementary PowerTrench MOSFET

Features

* Q1
* 4.2 A,
* 20V. RDS(ON) = 55 mΩ @ VGS =
* 4.5 V RDS(ON) = 82 mΩ @ VGS =
* 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extreme

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FDC6020C Complementary PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDC6020C-like datasheet