FDC6020C Datasheet - Fairchild Semiconductor

FDC6020C Complementary PowerTrench MOSFET

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications wher.

FDC6020C Features

* Q1

* 4.2 A,

* 20V. RDS(ON) = 55 mΩ @ VGS =

* 4.5 V RDS(ON) = 82 mΩ @ VGS =

* 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extreme

FDC6020C_FairchildSemiconductor.pdf