FDC606P Datasheet, Mosfet, Fairchild Semiconductor

FDC606P Features

• Mosfet
• 
    –6 A,
    –12 V. RDS(ON) = 26 mΩ @ VGS =
    –4.5 V RDS(ON) = 35 mΩ @ VGS =
    –2.5 V RDS(ON) = 53 mΩ @ VGS =
   &n

PDF File Details

Part number:

FDC606P

Manufacturer:

Fairchild Semiconductor

File Size:

154.53kb

Download:

📄 Datasheet

Description:

P-channel 1.8v specified powertrench mosfet. This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power manage

FDC606P Application

• Applications Features
• 
    –6 A,
    –12 V. RDS(ON) = 26 mΩ @ VGS =
    –4.5 V RDS(ON) = 35 mΩ @ VGS

TAGS

FDC606P

Fairchild Semiconductor

📁 Related Datasheet

FDC606P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, POWERTRENCH) 1.8 V Specified FDC606P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRE.

FDC6000NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDC6000NZ June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugge.

FDC6020C - Complementary PowerTrench MOSFET (Fairchild Semiconductor)
FDC6020C November 2003 FDC6020C Complementary PowerTrench MOSFET General Description These N & P-Channel MOSFETs are produced using Fairchild Semic.

FDC602P - P-Channel MOSFET (Fairchild Semiconductor)
FDC602P April 2001 FDC602P P-Channel 2.5V PowerTrench® Specified MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate.

FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDC6036P January 2004 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description This dual P-Channel 1.8V specified MOSFET uses Fairc.

FDC604P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, POWERTRENCH®, Specified 1.8 V FDC604P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTR.

FDC604P - P-Channel MOSFET (Fairchild Semiconductor)
FDC604P January 2001 FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDC608PZ - P-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – P-Channel, POWERTRENCH) 2.5 V Specified FDC608PZ, FDC608PZ-F171 D DS DG D TSOT−23−6 CASE 419BL Description This .

FDC608PZ - N-Channel MOSFET (Fairchild Semiconductor)
FDC608PZ June 2006 FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using .

FDC608PZ-F171 - P-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – P-Channel, POWERTRENCH) 2.5 V Specified FDC608PZ, FDC608PZ-F171 D DS DG D TSOT−23−6 CASE 419BL Description This .