FDC610PZ

MOSFET

Fairchild Semiconductor

* General Description August 2007 tm

* Max rDS(on) = 42mΩ at VGS =

* 10V, ID =

* 4.9A

* Max rDS(on) = 75mΩ at VGS =

* 4.5V, ID =

* 3.7A

* Low gate charge (17nC typical).

* High performance trench technology for extremely low rDS(on).

FDC610PZ

Fairchild Semiconductor

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Mosfet.

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FDC610PZ MOSFET Fairchild Semiconductor

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