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FDC608PZ-F171 - P-Channel MOSFET

This page provides the datasheet information for the FDC608PZ-F171, a member of the FDC608PZ P-Channel MOSFET family.

Datasheet Summary

Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 5.8 A,.
  • 20 V. RDS(ON) = 30 mW @ VGS =.
  • 4.5 V RDS(ON) = 43 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SuperSOT TM.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8) Low Profile (1 mm Thick).
  • These Devices are Pb.
  • Free and Halide Free.

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Datasheet preview – FDC608PZ-F171

Datasheet Details

Part number FDC608PZ-F171
Manufacturer ON Semiconductor
File Size 328.41 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC608PZ-F171 Datasheet
Additional preview pages of the FDC608PZ-F171 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – P-Channel, POWERTRENCH) 2.5 V Specified FDC608PZ, FDC608PZ-F171 D DS DG D TSOT−23−6 CASE 419BL Description This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions. Features • –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.
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