FDC608PZ-F171 Datasheet, Mosfet, ON Semiconductor

✔ FDC608PZ-F171 Features

5.8 A,
20 V. RDS(ON) = 30 mW @ VGS =
4.5 V RDS(ON) = 43 mW @ VGS =
2.5 V
Low Gate Charge
High Performance Trench Technology for Extremely Low RDS(ON)
SuperSOT

✔ FDC608PZ-F171 Application

load switching and power management, battery power circuits, and dc
dc conversions. Features
5.8 A,
20

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FDC608PZ-F171

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📄 Datasheet

Description:

P-channel mosfet. This P*Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to mi

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P-CHANNEL POWERTRENCH MOSFET, 2.

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FDC608PZ-F171

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FDC608PZ-F171 P-Channel MOSFET ON Semiconductor