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FDC604P - P-Channel MOSFET

Datasheet Summary

Description

This P

voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Features

  • 5.5 A,.
  • 20 V. RDS(ON) = 33 mW @ VGS =.
  • 4.5 V RDS(ON) = 43 mW @ VGS =.
  • 2.5 V RDS(ON) = 60 mW @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • These Device is Pb.
  • Free and Halogen Free.

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Datasheet preview – FDC604P

Datasheet Details

Part number FDC604P
Manufacturer ON Semiconductor
File Size 331.41 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC604P Datasheet
Additional preview pages of the FDC604P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH®, Specified 1.8 V FDC604P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1.8 V • Fast switching speed • High Performance Trench Technology for Extremely Low RDS(ON) • These Device is Pb−Free and Halogen Free Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous − Pulsed (Note 1a) −5.
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