FDC602P Datasheet - Fairchild Semiconductor

FDC602P P-Channel MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V * 12V). Applications * Battery management * Load switch *.

FDC602P Features

* 5.5 A,

* 20 V RDS(ON) = 35 mΩ @ VGS =

* 4.5 V RDS(ON) = 50 mΩ @ VGS =

* 2.5 V

* Fast switching speed

* High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise

FDC602P_FairchildSemiconductor.pdf