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DATA SHEET www.onsemi.com
MOSFET – P-Channel, POWERTRENCH)
2.5 V Specified
FDC608PZ, FDC608PZ-F171
D DS
DG D TSOT−23−6 CASE 419BL
Description This P−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions.
Features
• –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V
RDS(ON) = 43 mW @ VGS = –2.
FDC608PZ Datasheet
