FDC608PZ Datasheet - ON Semiconductor

FDC608PZ P-Channel MOSFET

This P *Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power app.

FDC608PZ Features

* 5.8 A,

* 20 V. RDS(ON) = 30 mW @ VGS =

* 4.5 V RDS(ON) = 43 mW @ VGS =

* 2.5 V

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(ON)

* SuperSOT TM

* 6 Package: Small Footprint (72% Smaller than Standard

FDC608PZ-ONSemiconductor.pdf