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FDC642P_F085 P-Channel PowerTrench MOSFET

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Description

FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ .

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Features

* Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
* Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
* Fast switching speed
* Low gate charge(6.9nC typical)
* High performance trench technology for extremely low rDS(on)
* SuperSOTTM-6 package:small footpr

Applications

* Load switch
* Battery protection
* Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www. fairchildsemi. com FDC642P_F085 P-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA =

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