FDC6420C
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Dual-channel mosfet.
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FDC6420C - 20V N & P-Channel PowerTrench MOSFETs
(Fairchild Semiconductor)
FDC6420C
September 2001
FDC6420C
20V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild.
FDC642P - P-Channel MOSFET
(Fairchild Semiconductor)
FDC642P
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using F.
FDC642P - P-Channel MOSFET
(ON Semiconductor)
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Feature.
FDC642P-F085 - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, POWERTRENCH)
-20 V, -4 A, 100 mW
FDC642P-F085, FDC642P-F085P
Features
Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A Typ RD.
FDC642P-F085P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, POWERTRENCH)
-20 V, -4 A, 100 mW
FDC642P-F085, FDC642P-F085P
Features
Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A Typ RD.
FDC642P_F085 - P-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDC642P_F085 P-Channel PowerTrench® MOSFET
FDC642P_F085
P-Channel PowerTrench® MOSFET
-20V, -4A, 100mΩ
Features
Typ rDS(on) = 52.5mΩ at VGS = -4.5.
FDC6401N - Dual N-Channel MOSFET
(ON Semiconductor)
MOSFET – Dual, N-Channel, POWERTRENCH), Specified
2.5 V
FDC6401N
General Description This Dual N−Channel MOSFET has been designed specifically
to imp.
FDC6401N - Dual N-Channel 2.5V Specified PowerTrench MOSFET
(Fairchild Semiconductor)
FDC6401N
October 2001
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This Dual N-Channel MOSFET has been designed sp.
FDC640P - P-Channel MOSFET
(Fairchild Semiconductor)
FDC640P
August 2000
FDC640P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in a .
FDC640P - P-Channel MOSFET
(ON Semiconductor)
.
