FDC6401N

Dual N-Channel MOSFET

ON Semiconductor

* 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V

* Low Gate Charge (3.3 nC)

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power and Current Handling Capability

* This is a Pb

* Free and Halide Free

FDC6401N

327.88 KB

Dual n-channel mosfet.

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FDC6401N Dual N-Channel MOSFET ON Semiconductor

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