FDC6401N - Dual N-Channel MOSFET
FDC6401N Features
* 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
* Low Gate Charge (3.3 nC)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* This is a Pb
* Free and Halide Free
