FDC6401N Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual, N-Channel, POWERTRENCH), Specified 2.5 V FDC6401N General .
This Dual N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or co.

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Datasheet Specifications

Part number: FDC6401N
Manufacturer: ON Semiconductor ↗
File Size: 327.88 KB
Datasheet: FDC6401N-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
* Low Gate Charge (3.3 nC)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* This is a Pb
* Free and Halide Free

Applications

* DC/DC Converter
* Battery Protection
* Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain
* Source Voltage Gate
* Source Voltage Drain Current
* Continuous (Note 1a. )
* P

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FDC6401N Dual N-Channel MOSFET ON Semiconductor

ON Semiconductor FDC6401N-like datasheet