FDC642P-F085 P-Channel MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P .

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Datasheet Specifications

Part number: FDC642P-F085
Manufacturer: ON Semiconductor ↗
File Size: 1.20 MB
Datasheet: FDC642P-F085-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Typ RDS(on) = 52.5 mW at VGS =
* 4.5 V, ID =
* 4 A
* Typ RDS(on) = 75.3 mW at VGS =
* 2.5 V, ID =
* 3.2 A
* Fast Switching Speed
* Low Gate Charge (6.9 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(on)
* SUPERSOTt

Applications

* Load Switch
* Battery Protection
* Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current
* Continuous (VGS = 4.5 V)
* Pulsed
* 20 V

FDC642P-F085 Distributors

📁 Related Datasheet

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FDC642P-F085 P-Channel MOSFET ON Semiconductor

ON Semiconductor FDC642P-F085-like datasheet