FDN342P Datasheet - ON Semiconductor

P-Channel MOSFET

FDN342P Features

* 2 A,

* 20 V

* RDS(ON) = 0.08 W @ VGS =

* 4.5 V

* RDS(ON) = 0.13 W @ VGS =

* 2.5 V

* Rugged gate rating (±12 V).

* High Performance Trench Technology for Extremely Low RDS(ON)

* Enhanced power SUPERSOTt

* 3 (SOT

FDN342P General Description

This P *Channel 2.5 V specified MOSFET is produced in a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V * 12 V). Applications * Load Switch * Battery Pr.

FDN342P Datasheet (305.34 KB)