FDN357N

N-Channel MOSFET

ON Semiconductor

FDN357N Features

* 1.9 A, 30 V

* RDS(ON) = 0.09 W @ VGS = 4.5 V

* RDS(ON) = 0.06 W @ VGS = 10 V

* Industry Standard Outline SOT

* 23 Surface Mount Package Using Proprietary SUPERSOT

* 3 Design for Superior Thermal and Electrical Capabilities

* High Density Cell Des

FDN357N General Description

SUPERSOTt

*3 N

*Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance. These devices are particularly.

FDN357N Datasheet (279.88 KB)