FDN357N N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Logic Level, Enhancement Mode FDN357N General .
SUPERSOTt. 3 N. Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell d.

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Datasheet Specifications

Part number: FDN357N
Manufacturer: ON Semiconductor ↗
File Size: 279.88 KB
Datasheet: FDN357N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1.9 A, 30 V
* RDS(ON) = 0.09 W @ VGS = 4.5 V
* RDS(ON) = 0.06 W @ VGS = 10 V
* Industry Standard Outline SOT
* 23 Surface Mount Package Using Proprietary SUPERSOT
* 3 Design for Superior Thermal and Electrical Capabilities
* High Density Cell Des

Applications

* in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in

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FDN357N N-Channel MOSFET ON Semiconductor

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