FDN357N - N-Channel MOSFET

ON Semiconductor

FDN357N Datasheet Preview — Preview of FDN357N PDF

Datasheet Details

Part number	FDN357N
Manufacturer	ON Semiconductor ↗
File Size	279.88 KB
Description	N-Channel MOSFET
Datasheet	FDN357N-ONSemiconductor.pdf

FDN357N Product details

Description

SUPERSOTt 3 N Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. line power loss are needed in a v

Features

1.9 A, 30 V.
RDS(ON) = 0.09 W @ VGS = 4.5 V.
RDS(ON) = 0.06 W @ VGS = 10 V.
Industry Standard Outline SOT.
23 Surface Mount Package Using Proprietary.

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Published: Dec 25, 2023 |