FDN302P Datasheet, Mosfet, Fairchild Semiconductor

FDN302P Features

• Mosfet
• 
    –20 V,
    –2.4 A. RDS(ON) = 0.055 Ω @ VGS =
    –4.5 V RDS(ON) = 0.080 Ω @ VGS =
    –2.5 V
• Fast switching spee

PDF File Details

Part number:

FDN302P

Manufacturer:

Fairchild Semiconductor

File Size:

103.44kb

Download:

📄 Datasheet

Description:

P-channel mosfet. This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized fo

FDN302P Application

• Applications with a wide range of gate drive voltage (2.5V
    – 12V). Features
• 
    –20 V,
    –2.4 A

TAGS

FDN302P

Fairchild Semiconductor

📁 Related Datasheet

FDN302P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons.

FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDN304P - P-Channel MOSFET (Kexin)
SMD Type P-Channel MOSFET FDN304P (KDN304P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70.

FDN304P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel 1.8 V Specified POWERTRENCH) FDN304P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage P.

FDN304PZ - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low volta.

FDN304PZ - P-Channel MOSFET (Fairchild Semiconductor)
FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s .

FDN306P - P-Channel MOSFET (Fairchild Semiconductor)
FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.

FDN306P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltag.

FDN308P - P-Channel MOSFET (Fairchild Semiconductor)
FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged ga.

FDN308P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN308P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons.