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FDN335N - N-Channel MOSFET
(Fairchild Semiconductor)
FDN335N
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using .
FDN335N - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, 2.5 V Specified, POWERTRENCH)
20 V, 1.7 A, 100 mW
FDN335N
General Description This N−Channel 2.5 V specified MOSFET is produced u.
FDN336P - single P-Channel MOSFET
(Fairchild Semiconductor)
November 1998
FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using.
FDN336P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – Single P-Channel POWERTRENCH)
2.5 V Specified
FDN336P
Description This P−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced.
FDN337N - N-Channel MOSFET
(Fairchild Semiconductor)
March 1998
FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT -3 N-Channel logic level enhancement m.
FDN337N - N-Channel MOSFET
(ON Semiconductor)
Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect
FDN337N
General Description SUPERSOTt−3 N−Channel logic level enhancement mode po.
FDN338P - P-Channel MOSFET
(Fairchild Semiconductor)
FDN338P
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
November 2013
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’.
FDN338P - P-Channel MOSFET
(ON Semiconductor)
MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN338P
General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced
low voltag.
FDN339AN - N-Channel MOSFET
(Fairchild Semiconductor)
FDN339AN
November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced us.
FDN339AN - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel POWERTRENCH)
2.5 V Specified
FDN339AN
Description This N−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced Power.
