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FDN338 - FET

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Part number FDN338
Manufacturer DCY
File Size 415.78 KB
Description FET
Datasheet download datasheet FDN338 Datasheet
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Other Datasheets by DCY

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    F DN338 (DMDN338P) SOT-23 (SOT-23 Field Effect Transistors) WWW.DCY-CHINA.NET P-Channel Enhancement-Mode MOS FETs P MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ BVDSS VGS ID IDM PD Junction TJ Storage Temperature Tstg ■DEVICE MARKING F DN338 (DMDN338P) =338P Max -20 +8 -1.6 -5 500 150 -55to+150 Unit V V A A mW ℃ ℃ WWW.DCY-CHINA.NET F DN338 (DMDN338P) ■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ， 25℃) Characteristic Symbol Min Typ Max Drain-Source Breakdown Voltage -(ID = -250uA,VGS=0V) BVDSS -20 — — Gate Threshold Voltage (ID = -250uA,VGS= VDS) VGS(th) -0.4 — -1.
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