FDN338 Datasheet - DCY

FDN338 FET

F DN338 (DMDN338P) SOT-23 (SOT-23 Field Effect Transistors) WWW.DCY-CHINA.NET P-Channel Enhancement-Mode MOS FETs P MOS MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ BVDSS VGS ID IDM PD Junction TJ Storage Temperature Tstg DEVICE MARKING F DN338 (DMDN338P) =338P Max -20 +8 -1.6 -5 500 150 -55to+150 Unit V V A A mW ℃ ℃ WWW.DCY-CHINA.N.

FDN338 Datasheet (415.78 KB)