FDN352AP - P-Channel MOSFET

ON Semiconductor

FDN352AP Datasheet Preview — Preview of FDN352AP PDF

Datasheet Details

Part number	FDN352AP
Manufacturer	ON Semiconductor ↗
File Size	238.18 KB
Description	P-Channel MOSFET
Datasheet	FDN352AP-ONSemiconductor.pdf

FDN352AP Product details

Description

This P Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. line power loss is needed in a very small outline surface mount package.

Features

1.3 A,.
30 V RDS(ON) = 180 mW @ VGS =.
10 V.
1.1 A,.
30 V RDS(ON) = 300 mW @ VGS =.
4.5 V.
High Performance Trench Technology for Extremely Low RDS(ON).
High Power Version of Industry Standard SOT.
23 Package. Identical Pin.
out to SOT.
23 with 30% Higher Power Handling Capability.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 25, 2023 |