FDN352AP P-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * Single, P-Channel, POWERTRENCH) FDN352AP VDSS *30 V RDS(ON) MAX 180 mW @ *10 V 300 mW @ .
This P. Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on.

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Datasheet Specifications

Part number: FDN352AP
Manufacturer: ON Semiconductor ↗
File Size: 238.18 KB
Datasheet: FDN352AP-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* 1.3 A,
* 30 V RDS(ON) = 180 mW @ VGS =
* 10 V
* 1.1 A,
* 30 V RDS(ON) = 300 mW @ VGS =
* 4.5 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power Version of Industry Standard SOT
* 23 Packa

Applications

* where low in

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FDN352AP P-Channel MOSFET ON Semiconductor

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