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FDN359AN

N-Channel MOSFET

FDN359AN Features

* 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8

FDN359AN General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications.

FDN359AN Datasheet (264.86 KB)

Preview of FDN359AN PDF

Datasheet Details

Part number:

FDN359AN

Manufacturer:

Fairchild Semiconductor

File Size:

264.86 KB

Description:

N-channel mosfet.

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TAGS

FDN359AN N-Channel MOSFET Fairchild Semiconductor

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