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MOSFET – Single P-Channel POWERTRENCH)
2.5 V Specified
FDN336P
Description This P−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC−DC conversion.
Features
• −1.3 A, −20 V
♦ RDS(on) = 0.20 W @ VGS = −4.5 V ♦ RDS(on) = 0.27 W @ VGS = −2.5 V
• Low Gate Charge (3.
FDN336P Datasheet
