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FDN338P P-Channel MOSFET

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Description

FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General .
This P-Channel 2.

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Datasheet Specifications

Part number
FDN338P
Manufacturer
Fairchild Semiconductor
File Size
321.71 KB
Datasheet
FDN338P_FairchildSemiconductor.pdf
Description
P-Channel MOSFET

Features

* 1.6 A,
* 20 V. RDS(ON) = 115 mΩ @ VGS =
* 4.5 V RDS(ON) = 155 mΩ @ VGS =
* 2.5 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling ca

Applications

* Applications
* Battery management
* Load switch

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