FDN338P Datasheet - Fairchild Semiconductor

FDN338P - P-Channel MOSFET

FDN338P Features

* 1.6 A,

* 20 V. RDS(ON) = 115 mΩ @ VGS =

* 4.5 V RDS(ON) = 155 mΩ @ VGS =

* 2.5 V

* Fast switching speed

* High performance trench technology for extremely low RDS(ON)

* SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling ca

Datasheet Details

FDN338P

Fairchild Semiconductor

321.71 KB

P-channel mosfet.

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