FDN338P - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDN338P
Manufacturer	Fairchild Semiconductor
File Size	321.71 KB
Description	P-Channel MOSFET
Datasheet	FDN338P_FairchildSemiconductor.pdf

This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Battery management Load switch Battery protection

1.6 A,.
20 V. RDS(ON) = 115 mΩ @ VGS =.
4.5 V RDS(ON) = 155 mΩ @ VGS =.
2.5 V.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage.

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Published: Mar 30, 2005 |