FDN337N Datasheet - Fairchild Semiconductor

FDN337N, N-Channel MOSFET

March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS.

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Datasheet Details

Part number:

FDN337N

Manufacturer:

Fairchild Semiconductor

File Size:

270.42 KB

Description:

N-Channel MOSFET

Features

* 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS = 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance a

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