Datasheet4U Logo Datasheet4U.com

FDN337N Datasheet - Fairchild Semiconductor

FDN337N - N-Channel MOSFET

SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low volta

FDN337N Features

* 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS = 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance a

FDN337N_FairchildSemiconductor.pdf

Preview of FDN337N PDF
FDN337N Datasheet Preview Page 2 FDN337N Datasheet Preview Page 3

Datasheet Details

Part number:

FDN337N

Manufacturer:

Fairchild Semiconductor

File Size:

270.42 KB

Description:

N-channel mosfet.

📁 Related Datasheet

📌 All Tags