Part number:
FDN337N
Manufacturer:
Fairchild Semiconductor
File Size:
270.42 KB
Description:
N-channel mosfet.
FDN337N_FairchildSemiconductor.pdf
Datasheet Details
SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low volta
FDN337N Features
* 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS = 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance a
FDN337N_FairchildSemiconductor.pdf
Datasheet Details
FDN337N
Fairchild Semiconductor
270.42 KB
N-channel mosfet.
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