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FDN306P - P-Channel MOSFET

Datasheet Summary

Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Features

  • 2.6 A,.
  • 12 V. RDS(ON) = 40 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 50 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 80 mΩ @ VGS =.
  • 1.8 V.

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Datasheet preview – FDN306P

Datasheet Details

Part number FDN306P
Manufacturer Fairchild Semiconductor
File Size 144.58 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN306P Datasheet
Additional preview pages of the FDN306P datasheet.

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Full PDF Text Transcription

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FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.
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