FDN337N N-Channel MOSFET

ON Semiconductor

Description

Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General .
SUPERSOTt. 3 N. Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell d.

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Datasheet Specifications

Part number: FDN337N
Manufacturer: ON Semiconductor ↗
File Size: 278.62 KB
Datasheet: FDN337N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 2.2 A, 30 V
* RDS(on) = 0.065 W @ VGS = 4.5 V
* RDS(on) = 0.082 W @ VGS = 2.5 V
* Industry Standard Outline SOT
* 23 Surface Mount Package Using Proprietary SUPERSOT
* 3 Design for Superior Thermal and Electrical Capabilities
* High Density Cell

Applications

* in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in

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FDN337N N-Channel MOSFET ON Semiconductor

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