Datasheet4U Logo Datasheet4U.com

FDN337N - N-Channel MOSFET

Datasheet Summary

Description

SUPERSOTt 3 N

field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Features

  • 2.2 A, 30 V.
  • RDS(on) = 0.065 W @ VGS = 4.5 V.
  • RDS(on) = 0.082 W @ VGS = 2.5 V.
  • Industry Standard Outline SOT.
  • 23 Surface Mount Package Using Proprietary.

📥 Download Datasheet

Datasheet preview – FDN337N

Datasheet Details

Part number FDN337N
Manufacturer ON Semiconductor
File Size 278.62 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN337N Datasheet
Additional preview pages of the FDN337N datasheet.

📁 Similar Datasheet

  • FDN337N - N-Channel MOSFET (Fairchild Semiconductor)
  • FDN335N - N-Channel MOSFET (Fairchild Semiconductor)
  • FDN336P - single P-Channel MOSFET (Fairchild Semiconductor)
  • FDN338 - FET (DCY)
  • FDN338P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN339AN - N-Channel MOSFET (Fairchild Semiconductor)
  • FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN302P - P-ChanneI MOSFET (UMW)
  • FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN304P - P-Channel MOSFET (Kexin)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package. Features • 2.2 A, 30 V ♦ RDS(on) = 0.065 W @ VGS = 4.5 V ♦ RDS(on) = 0.082 W @ VGS = 2.
Published: |