FDN337N - N-Channel MOSFET

ON Semiconductor

FDN337N Datasheet Preview — Preview of FDN337N PDF

Datasheet Details

Part number	FDN337N
Manufacturer	ON Semiconductor ↗
File Size	278.62 KB
Description	N-Channel MOSFET
Datasheet	FDN337N-ONSemiconductor.pdf

FDN337N Product details

Description

SUPERSOTt 3 N Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. line power loss are needed in a v

Features

2.2 A, 30 V.
RDS(on) = 0.065 W @ VGS = 4.5 V.
RDS(on) = 0.082 W @ VGS = 2.5 V.
Industry Standard Outline SOT.
23 Surface Mount Package Using Proprietary.

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Published: Mar 22, 2020 |