FDN337N - N-Channel MOSFET
SUPERSOTt *3 N *Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on *state resistance.
These devices are particularly
FDN337N Features
* 2.2 A, 30 V
* RDS(on) = 0.065 W @ VGS = 4.5 V
* RDS(on) = 0.082 W @ VGS = 2.5 V
* Industry Standard Outline SOT
* 23 Surface Mount Package Using Proprietary SUPERSOT
* 3 Design for Superior Thermal and Electrical Capabilities
* High Density Cell
