FDN327N N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General .
This 20 V N. Channel MOSFET uses onsemi’s high voltage POWERTRENCH process.

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Datasheet Specifications

Part number: FDN327N
Manufacturer: ON Semiconductor ↗
File Size: 289.91 KB
Datasheet: FDN327N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 2 A, 20 V
* RDS(on) = 70 mW @ VGS = 4.5 V
* RDS(on) = 80 mW @ VGS = 2.5 V
* RDS(on) = 120 mW @ VGS = 1.8 V
* Low Gate Charge (4.5 nC typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(on)
* This

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FDN327N N-Channel MOSFET ON Semiconductor

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