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FDN338P - P-Channel MOSFET

Datasheet Summary

Description

This P

low voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Features

  • 1.6 A,.
  • 20 V RDS(ON) = 115 mW @ VGS =.
  • 4.5 V RDS(ON) = 155 mW @ VGS =.
  • 2.5 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT.
  • 23 in the Same Footprint.
  • This is a Pb.
  • Free and Halide Free Device.

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Datasheet preview – FDN338P

Datasheet Details

Part number FDN338P
Manufacturer ON Semiconductor
File Size 283.83 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN338P Datasheet
Additional preview pages of the FDN338P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN338P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • –1.6 A, –20 V RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS = –2.5 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT−23 in the Same Footprint • This is a Pb−Free and Halide Free Device Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
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