FDN338P Datasheet - ON Semiconductor

FDN338P P-Channel MOSFET

FDN338P Features

* 1.6 A,

* 20 V RDS(ON) = 115 mW @ VGS =

* 4.5 V RDS(ON) = 155 mW @ VGS =

* 2.5 V

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 3 Provides Low RDS(ON) and 30% Higher Power Handli

Datasheet Details

FDN338P

283.83 KB

P-channel mosfet.

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FDN338P FDN338P P-Channel MOSFET ON Semiconductor

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