Part number:
FDN336P
Manufacturer:
Fairchild Semiconductor
File Size:
67.53 KB
Description:
Single p-channel mosfet.
FDN336P_FairchildSemiconductor.pdf
Datasheet Details
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electron
FDN336P Features
* -1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability
FDN336P_FairchildSemiconductor.pdf
Datasheet Details
FDN336P
Fairchild Semiconductor
67.53 KB
Single p-channel mosfet.
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