FDN308P - P-Channel MOSFET
FDN308P Features
* 20 V,
* 1.5 A. RDS(ON) = 125 mΩ @ VGS =
* 4.5 V RDS(ON) = 190 mΩ @ VGS =
* 2.5 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling c
