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FDN308P - P-Channel MOSFET

Datasheet Summary

Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.

12V).

Features

  • 20 V,.
  • 1.5 A. RDS(ON) = 125 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 190 mΩ @ VGS =.
  • 2.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

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Datasheet preview – FDN308P

Datasheet Details

Part number FDN308P
Manufacturer Fairchild Semiconductor
File Size 96.53 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN308P Datasheet
Additional preview pages of the FDN308P datasheet.

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Full PDF Text Transcription

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FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.
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