FDN327N - N-Channel MOSFET
FDN327N Features
* 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 V
* Low gate charge (4.5 nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON) Applications
