FDN339AN N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel POWERTRENCH) 2.5 V Specified FDN339AN .
This N. Channel 2.

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Datasheet Specifications

Part number: FDN339AN
Manufacturer: ON Semiconductor ↗
File Size: 264.90 KB
Datasheet: FDN339AN-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 3 A, 20 V
* RDS(on) = 0.035 W @ VGS = 4.5 V
* RDS(on) = 0.050 W @ VGS = 2.5 V
* Low Gate Charge (7 nC Typical)
* High Performance Trench technology for Extremely Low RDS(ON)

Applications

* DC
* DC Converter
* Load Switch ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current
* Continuous (Note 1a)
* Pulsed 20 V ±8 V A 3 20 PD Po

FDN339AN Distributors

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FDN339AN N-Channel MOSFET ON Semiconductor

ON Semiconductor FDN339AN-like datasheet