FDN339AN - N-Channel MOSFET

ON Semiconductor

FDN339AN Datasheet Preview — Preview of FDN339AN PDF

Datasheet Details

Part number	FDN339AN
Manufacturer	ON Semiconductor ↗
File Size	264.90 KB
Description	N-Channel MOSFET
Datasheet	FDN339AN-ONSemiconductor.pdf

FDN339AN Product details

Description

This N Channel 2.5 V specified MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

3 A, 20 V.
RDS(on) = 0.035 W @ VGS = 4.5 V.
RDS(on) = 0.050 W @ VGS = 2.5 V.
Low Gate Charge (7 nC Typical).
High Performance Trench technology for Extremely Low RDS(ON).
High Power and Current Handling Capability Typical.

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Published: Jan 24, 2023 |