FDN357N Datasheet, Mosfet, Fairchild Semiconductor

FDN357N Features

• Mosfet 1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior th

PDF File Details

Part number:

FDN357N

Manufacturer:

Fairchild Semiconductor

File Size:

84.64kb

Download:

📄 Datasheet

Description:

N-channel mosfet. SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high c

FDN357N Application

• Applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power lo

TAGS

FDN357N

Fairchild Semiconductor

📁 Related Datasheet

FDN357N - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, Logic Level, Enhancement Mode FDN357N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect .

FDN352AP - PowerTrench MOSFET (Fairchild Semiconductor)
FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench® MOSFET Features ■ –1.3 A, –30V –1.1 A, –30V RDS(O.

FDN352AP - P-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1.

FDN358P - P-Channel MOSFET (Fairchild Semiconductor)
March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement .

FDN358P - P-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – Single, P-Channel, POWERTRENCH), Logic Level VDSS −30 V RDS(ON) MAX 125 mW @ −10 V 200 mW @ −4.5 V ID MAX −1.5 .

FDN359AN - N-Channel MOSFET (Fairchild Semiconductor)
April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semi.

FDN359AN - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359AN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW.

FDN359BN - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW.

FDN359BN - N-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)
FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using F.

FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat.