FDN357N N-Channel MOSFET

Fairchild Semiconductor

Description

March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS.

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Datasheet Specifications

Part number: FDN357N
Manufacturer: Fairchild Semiconductor
File Size: 84.64 KB
Datasheet: FDN357N_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance an

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FDN357N N-Channel MOSFET Fairchild Semiconductor

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