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FDN357N

N-Channel MOSFET

FDN357N Features

* 1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance an

FDN357N General Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volt.

FDN357N Datasheet (84.64 KB)

Preview of FDN357N PDF

Datasheet Details

Part number:

FDN357N

Manufacturer:

Fairchild Semiconductor

File Size:

84.64 KB

Description:

N-channel mosfet.

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FDN357N N-Channel MOSFET Fairchild Semiconductor

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