FDN357N - N-Channel MOSFET

Fairchild Semiconductor

FDN357N Datasheet Preview — Preview of FDN357N PDF

Datasheet Details

Part number	FDN357N
Manufacturer	Fairchild ↗ Semiconductor
File Size	84.64 KB
Description	N-Channel MOSFET
Datasheet	FDN357N_FairchildSemiconductor.pdf

FDN357N Product details

Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 7 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Pa.

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Published: Mar 30, 2005 |