FDN335N N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, 2.5 V Specified, POWERTRENCH) 20 V, 1.7 A, 100 mW FDN335N General .
This N. Channel 2.

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Datasheet Specifications

Part number: FDN335N
Manufacturer: ON Semiconductor ↗
File Size: 288.03 KB
Datasheet: FDN335N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1.7 A, 20 V
* RDS(ON) = 0.07 W @ VGS = 4.5 V
* RDS(ON) = 0.1 W @ VGS = 2.5 V
* Low Gate Charge (3.5 nC typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* This Device is Pb

Applications

* DC
* DC Converter
* Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS Drain
* Source Voltage 20 V VGSS Gate
* Source Voltage ±8 V ID Drain Current Continuous (Note 1a) 1.7 A Pulsed 8 PD Powe

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FDN335N N-Channel MOSFET ON Semiconductor

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