FDN359BN - N-Channel MOSFET

ON Semiconductor

FDN359BN Datasheet Preview — Preview of FDN359BN PDF

Datasheet Details

Part number	FDN359BN
Manufacturer	ON Semiconductor ↗
File Size	293.34 KB
Description	N-Channel MOSFET
Datasheet	FDN359BN-ONSemiconductor.pdf

FDN359BN Product details

Description

This N Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance. line power loss and fast switching are required.

Features

2.7 A, 30 V.
RDS(ON) = 0.046 W @ VGS = 10 V.
RDS(ON) = 0.060 W @ VGS = 4.5 V.
Very Fast Switching Speed.
Low Gate Charge (5 nC Typical).
High Performance Version of Industry Standard SOT.
23 Package. Identical Pin Out to SOT.
23 with 30% Higher Power Handling Capability.
This Device is Pb.
Free and Halide Free.

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Published: Dec 25, 2023 |