FDN352AP PowerTrench MOSFET

Fairchild Semiconductor

Description

FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench® MOSFET .
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimiz.

📥 Download Datasheet

FDN352AP Datasheet Preview — Preview of FDN352AP PDF

Datasheet Specifications

Part number: FDN352AP
Manufacturer: Fairchild Semiconductor
File Size: 149.14 KB
Datasheet: FDN352AP_FairchildSemiconductor.pdf
Description: PowerTrench MOSFET

Features

* 1.3 A,
* 30V
* 1.1 A,
* 30V RDS(ON) = 180 mΩ @ VGS =
* 10V RDS(ON) = 300 mΩ @ VGS =
* 4.5V
* High performance trench technology for extremely low RDS(ON).
* High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 w

Applications

* where low in-line power loss is needed in a very small outline surface mount package. Applications
* Notebook computer power management D D www. DataSheet4U. com S G G S SuperSOT™-3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RθJA RθJC Drain-Sour

FDN352AP Distributors

📁 Related Datasheet

FDN359BN FDN304PZ FDN306P FDN308P FDN327N FDN335N

📌 All Tags

FDN352AP PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDN352AP-like datasheet