FDN352AP Datasheet - Fairchild Semiconductor

FDN352AP PowerTrench MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and batte.

FDN352AP Features

* 1.3 A,

* 30V

* 1.1 A,

* 30V RDS(ON) = 180 mΩ @ VGS =

* 10V RDS(ON) = 300 mΩ @ VGS =

* 4.5V

* High performance trench technology for extremely low RDS(ON).

* High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 w

FDN352AP Datasheet (149.14 KB)

FDN352AP Datasheet Preview — Preview of FDN352AP PDF

Datasheet Details

Part number:

FDN352AP

Manufacturer:

Fairchild Semiconductor

File Size:

149.14 KB

Description:

Powertrench mosfet.

📁 Related Datasheet

FDN352AP P-Channel MOSFET (ON Semiconductor)

FDN357N N-Channel MOSFET (Fairchild Semiconductor)

FDN357N N-Channel MOSFET (ON Semiconductor)

FDN358P P-Channel MOSFET (Fairchild Semiconductor)

FDN358P P-Channel MOSFET (ON Semiconductor)

FDN359AN N-Channel MOSFET (Fairchild Semiconductor)

FDN359AN N-Channel MOSFET (ON Semiconductor)

FDN359BN N-Channel MOSFET (ON Semiconductor)

FDN359BN N-Channel Logic Level PowerTrench MOSFET (Fairchild Semiconductor)

FDN302P P-Channel MOSFET (Fairchild Semiconductor)

TAGS

FDN352AP PowerTrench MOSFET Fairchild Semiconductor

Image Gallery

FDN352AP Distributor