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FDN352AP

PowerTrench MOSFET

FDN352AP Features

* 1.3 A,

* 30V

* 1.1 A,

* 30V RDS(ON) = 180 mΩ @ VGS =

* 10V RDS(ON) = 300 mΩ @ VGS =

* 4.5V

* High performance trench technology for extremely low RDS(ON).

* High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 w

FDN352AP General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and batte.

FDN352AP Datasheet (149.14 KB)

Preview of FDN352AP PDF

Datasheet Details

Part number:

FDN352AP

Manufacturer:

Fairchild Semiconductor

File Size:

149.14 KB

Description:

Powertrench mosfet.

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TAGS

FDN352AP PowerTrench MOSFET Fairchild Semiconductor

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