FDN352AP - PowerTrench MOSFET

Fairchild Semiconductor

FDN352AP Datasheet Preview — Preview of FDN352AP PDF

Datasheet Details

Part number	FDN352AP
Manufacturer	Fairchild ↗ Semiconductor
File Size	149.14 KB
Description	PowerTrench MOSFET
Datasheet	FDN352AP_FairchildSemiconductor.pdf

FDN352AP Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Notebook computer power management D D www.DataSheet4U.com S G G S

Features

1.3 A,.
30V.
1.1 A,.
30V RDS(ON) = 180 mΩ @ VGS =.
10V RDS(ON) = 300 mΩ @ VGS =.
4.5V.
High performance trench technology for extremely low RDS(ON).
High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. General.

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Published: Jun 4, 2007 |