FDN358P - P-Channel MOSFET

Fairchild Semiconductor

FDN358P Datasheet Preview — Preview of FDN358P PDF

Datasheet Details

Part number	FDN358P
Manufacturer	Fairchild ↗ Semiconductor
File Size	85.27 KB
Description	P-Channel MOSFET
Datasheet	FDN358P_FairchildSemiconductor.pdf

FDN358P Product details

Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 8 35 S G S SuperSOT -3 TM G Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Sourc.

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Published: Mar 30, 2005 |