FDN358P P-Channel MOSFET

Fairchild Semiconductor

Description

March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS.

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Datasheet Specifications

Part number: FDN358P
Manufacturer: Fairchild Semiconductor
File Size: 85.27 KB
Datasheet: FDN358P_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capa

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FDN358P P-Channel MOSFET Fairchild Semiconductor

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