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FDN358P

P-Channel MOSFET

FDN358P Features

* -1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capa

FDN358P General Description

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volt.

FDN358P Datasheet (85.27 KB)

Preview of FDN358P PDF

Datasheet Details

Part number:

FDN358P

Manufacturer:

Fairchild Semiconductor

File Size:

85.27 KB

Description:

P-channel mosfet.

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FDN358P P-Channel MOSFET Fairchild Semiconductor

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