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HMC816LP4E Datasheet SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER

Manufacturer: Analog Devices

General Description

The HMC816LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz.

The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V.

Input and output return losses are excellent with minimal external matching and bias decoupling components.

Overview

Amplifiers - Low Noise - SMT 7 7-1 HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications The HMC816LP4E is ideal.

Key Features

  • Low Noise Figure: 0.5 dB.
  • Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB.
  • BTS & Infrastructure High Output IP3: +37 dBm.
  • Repeaters and Femtocells Single Supply: +3V to +5V.
  • Public Safety Radio.
  • Multi-Channel.