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2SA1300 PNP Silicon Epitaxial Planar Transistor
for strobo flash and medium power amplifier applications.
The transistor is subdivided into three groups, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current Power Dissipation Junction Temperature Storage Temperature Range
Pulsed(Note 1) DC
Note 1:Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Symbol -VCBO -VCES -VCEO -VEBO
-ICP -IC -IB Ptot Tj TS
Value 20 20 10 6 5 2 0.
2SA1300 Datasheet
