Description
The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages.
Features
- z VDS =20 V z ID =6A z Low on-state resistance Fast switching
RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD. z Lead Pb-free and Halogen-free
S1 D1/D2 S2
Absolute Maximum Ratings (Tc = 25℃)
Symbol Parameter VDS Drain-source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating and Stora.
BF8205E-BYD.pdf
