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BF94N60L Datasheet - BYD

N-Channel MOSFET

BF94N60L Features

* z VDS =600 V z ID =4A z RDS(ON) =1.9 Ω TYP(VGS=10V ,ID=2A) z Low CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche

BF94N60L General Description

The N-Channel enhancement mode power field effect transistor is produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These .

BF94N60L Datasheet (256.24 KB)

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Datasheet Details

Part number:

BF94N60L

Manufacturer:

BYD

File Size:

256.24 KB

Description:

N-channel mosfet.

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BF94N60L N-Channel MOSFET BYD

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