BF95N50L Datasheet N-Channel MOSFET

Manufacturer: BYD

Download the BF95N50L datasheet PDF. This datasheet also includes the BF95N50T variant, as both parts are published together in a single manufacturer document.

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BF95N50L n-channel mosfet by BYD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BF95N50T-BYD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BF95N50L
Manufacturer	BYD
File Size	209.02 KB
Description	N-Channel MOSFET
Download	BF95N50L Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

BYD Microelectronics Co., Ltd.

BF95N50T/BF95N50L 500V N-Channel MOSFET.

Key Features

z VDS =500 V z ID=5A z RDS(ON)≤1.60Ω TYP(VGS=10V,ID=2.5A) z Low CRSS (typical 7.8 pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) VGS Gate-Source Voltage IAR Avalanche Current EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC = 25°C).

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