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BIDNW30N60H3 Datasheet, Transistor, Bourns

BIDNW30N60H3 Datasheet, Transistor, Bourns

BIDNW30N60H3

datasheet Download (Size : 1.25MB)

BIDNW30N60H3 Datasheet
BIDNW30N60H3

datasheet Download (Size : 1.25MB)

BIDNW30N60H3 Datasheet

BIDNW30N60H3 Features and benefits

BIDNW30N60H3 Features and benefits

n 600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Low switching loss n Fast switching n RoHS compliant* Applicatio.

BIDNW30N60H3 Application

BIDNW30N60H3 Application

n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Induction he.

BIDNW30N60H3 Description

BIDNW30N60H3 Description

Insulated Gate Bipolar Transistor

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BIDNW30N60H3 Page 1 BIDNW30N60H3 Page 2 BIDNW30N60H3 Page 3

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TAGS

BIDNW30N60H3
Insulated
Gate
Bipolar
Transistor
Bourns

Manufacturer


Bourns

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