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BIDW50N65T Datasheet, Transistor, Bourns

BIDW50N65T Datasheet, Transistor, Bourns

BIDW50N65T

datasheet Download (Size : 1.13MB)

BIDW50N65T Datasheet
BIDW50N65T

datasheet Download (Size : 1.13MB)

BIDW50N65T Datasheet

BIDW50N65T Features and benefits

BIDW50N65T Features and benefits

n 650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Trench-Gate Field-Stop technology n Optimized for conduction n RoHS compliant* Applications n Switch.

BIDW50N65T Application

BIDW50N65T Application

n Switch-Mode Power Supplies (SMPS) n Uninterruptible Power Sources (UPS) n Power Factor Correction (PFC) n Inverters B.

BIDW50N65T Description

BIDW50N65T Description

Insulated Gate Bipolar Transistor

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TAGS

BIDW50N65T
Insulated
Gate
Bipolar
Transistor
Bourns

Manufacturer


Bourns

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