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BS616LV1623 Datasheet Very Low Power/voltage CMOS Sram

Manufacturer: Brilliance Semiconductor

Overview: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623.

Datasheet Details

Part number BS616LV1623
Manufacturer Brilliance Semiconductor
File Size 251.40 KB
Description Very Low Power/Voltage CMOS SRAM
Datasheet BS616LV1623-BSI.pdf

General Description

The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniqu

Key Features

  • S.
  • Vcc operation voltage : 2.7 ~ 3.6V.
  • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ. ) CMOS standby current.
  • High speed access time : -55 55ns -70 70ns.
  • Automatic power down when chip is deselected.
  • Three state outputs and TTL compatible.
  • Fully static operation.
  • Data re.

More Datasheets from Brilliance Semiconductor

Part Number Description
BS616LV1010 Very Low Power/Voltage CMOS SRAM
BS616LV2010 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2011 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2012 Very Low Power/Voltage CMOS SRAM
BS616LV2013 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2015 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016 Very Low Power CMOS SRAM
BS616LV2018 Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2020 Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2021 Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

BS616LV1623 Distributor