AFBR-S4N66P024M Datasheet | Broadcom

Description The Broad® AFBR-S4N66P024M is a Silicon Photomultiplier (Si PM) array used for ultra-sensitive precision measurements of single photons. Two 6 mm × 6 mm Si PMs are arranged in a 2×1 element array with a pitch of 7 mm. Larger areas can be covered with a Si PM-pitch of 7 mm by tiling multiple AFBR-S4N66P024M arrays. The passivation layer is a clear epoxy mold pound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum. The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most mon organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, Na I, Cs I, Ba F, La Br). This product is lead-free and Ro HS pliant. Block Diagram Figure 1: AFBR-S4N66P024M Block Diagram of Single Si PM Element Features - 2×1 Si PM array - Array size 13.54 mm × 6.54 mm - High PDE (63% at 420 nm) - Excellent SPTR and CRT - Excellent uniformity of breakdown voltage - Excellent uniformity of gain - Four-side tilable, with high fill factors - Cell pitch 40 µm - Highly transparent epoxy protection layer - Operating temperature range from 0°C to +60°C - Ro HS, CFM, and REACH pliant Applications - X-ray and gamma ray detection - Gamma ray spectroscopy - Safety and security - Nuclear medicine - Positron emission tomography - Life sciences - Flow cytometry - Fluorescence - luminescence measurements - Time-correlated single photon counting - High energy physics - Astrophysics Broad AFBR-S4N66P024M-DS104 August 16, 2022 AFBR-S4N66P024M Data Sheet Mechanical Drawing and Pin Layout 2×1 NUV-MT Silicon Photomultiplier Array Figure 2: Package Drawing with Dimensions 0.2...