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CSD01N650 - N-Channel Trench Power MOSFET

Description

The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for power switching application and LED backlighting.

Features

  • VDS=100V; ID=11A RDS(ON).

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Datasheet Details

Part number CSD01N650
Manufacturer CASS
File Size 654.34 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSD01N650 Datasheet

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features ● VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10V (Typ:90mΩ) ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● LED backlighting CSD01N650 To-252 Top View Schematic Diagram VDS =100V ID = 11A RDS(ON)= 90mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD01N650 CSD01N650 TO-252 Reel Size - Table 1.
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